SSCS Newsletter Telling the DRAM Story

The history, evolution and current status of DRAM

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by Adrian Offerman

January 1, 2008 - The January issue of Solid-State Circuits Society (SSCS) newsletter is devoted to the history, the evolution and the current status of Dynamic RAM. Apart from six new articles, the publication includes reprints of two original papers and an original patent.

• Revisiting Evolution of the MOSFET Dynamic RAM: A Personal View,
  by Robert Dennard (IBM)
• Field-Effect Transistor Memory, U.S. Patent No. 3,387,286, June 4, 1968,
  by R.H. Dennard
• At the Forefront of DRAM Development - A History of DRAM Circuit Design,
  by Kiyoo Itoh (Hitachi)
• In Quest of the Joy of Creation,
  by K. Itoh
• The Stacked Capacitor DRAM Cell and Three-Dimensional Memory,
  by Mitsumasa Koyanagi (Tohoku University)
• The Role of the Trench Capacitor in DRAM Innovation,
  by Hideo Sunami (Hiroshima University)
• The Remarkable Story of the DRAM Industry,
  by Randy Isaac, retired Vice President IBM
• DRAM - A Personal View,
  by R.C. Foss, retired Chairman of the Board and Founder, MOSAID Technologies

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